Holst Center researchers use sALD to create IGZO OLED display backplanes on PEN foils
Researchers from the Holst Center has applied spatial atomic layer deposition (sALD) to create both the semiconductor and dielectric layer in a thin-film transistor (TFT) Oxide-TFT (IGZO) display backplane - for the first time ever.
The researchers created a 200 PPI QVGA OLED display prototype on a thin PEN foil. This shows how TFTs can be produced in a low temperature process (below 200 degrees Celsius) using sALD on a cheap transparent plastic foil. The TFTs achieved a mobility of 8 cm2/V2 with channel lengths down to 1 um.