Holst Center researchers use sALD to create IGZO OLED display backplanes on PEN foils

Researchers from the Holst Center has applied spatial atomic layer deposition (sALD) to create both the semiconductor and dielectric layer in a thin-film transistor (TFT) Oxide-TFT (IGZO) display backplane - for the first time ever.

Holst sALD QVGA OLED prototype photo

The researchers created a 200 PPI QVGA OLED display prototype on a thin PEN foil. This shows how TFTs can be produced in a low temperature process (below 200 degrees Celsius) using sALD on a cheap transparent plastic foil. The TFTs achieved a mobility of 8 cm2/V2 with channel lengths down to 1 um.

The sALD equipment was developed by the Holst Center, and is being commercialized by the start-up SALDtech which was spun-off form the Holst. SALDtech current offers 1-Gen (320x250 mm) tools and is now developing production equipment.

Posted: Nov 18,2019 by Ron Mertens