OLET

Researchers from Europe, working with funding from the EU research program at the MOLOKO project, developed a new plasmonic sensor system that integrates an organic light-emitting transistor (OLET), an organic photo-diode (OPD), and a nanostructured plasmonic grating (NPG) all in the same device.

The researchers say that this design enables to create cost-effective and highly miniaturized optical sensors based on the optics-less plasmonic system. The researchers further say that the potential of OLETs, as planar multielectrode devices with inherent micrometer-wide emission areas, offers the incorporation of the light-emitting and light-detection modules together at unprecedented lateral proximity.

Organic-TFT backplane/emitter developer Mattrix Technologies has demonstrated a new AMOLED display prototype that is based on an amorphous-silicon (a:Si) backplane.

Mattrix believes that its proprietary vertical, organic light-emitting transistor (VOLET) pixel technology can dramatically reduce OLED production costs and improve display quality.

Researchers from Dresden's Technical University (TUD) developed a new OLED device structure that combine vertical organic permeable base transistors (OPBT) and OLEDs materials - organic permeable base light-emitting transistor, or OPB-LET.

The new design successfully combines the function of a highly efficient switching transistor and an organic light-emitting diode. The OLED transistors (OLETs) are three-terminal devices combining a thin-film transistor with a light-emitting diode. Unlike previous OLETs, the OPB-LET offer high performance, thanks to the permeable base electrode located at the center of the device. The electrode forms a distinctive optical microcavity and so regulates the charge carrier injection and transport.

Organic-TFT backplane/emitter developer Mattrix Technologies (previously nVerPix) announced that it has received a $1.5 million investment from JSR Corporation. This second investment by JSR is the first tranche in the company's new round (which will total, hopefully, $3 million)

JSR is a strategic investor, and has also launched a joint-development project for the development of solution-based conductive inks that will be sued in Mattrix's next-generation backplane transistors.

Organic-TFT backplane/emitter developer Mattrix Technologies (previously nVerPix) announced that it has closed its Series A financing round, with $3 million in investment from Samsung Ventures and JSR Corporation.

Mattrix Technologies, spun-out of the University of Florida in 2011, developed the world's first full-aperture OLET (organic light emitting transistor) display technology, based on the company's proprietary CN-VOLET (carbon-nanotube enabled, vertical, organic, light emitting transistor) technology, a new pixel architecture that combines the drive transistor, storage capacitor and light emitting layers into a sequentially deposited, vertical, transparent stack. The company is also looking into graphene electrodes as an alternative to CNTs.

Researchers from Italy's ISOF-CNR, University of Naples "Federico II" and Università di Modena e Reggio Emilia have developed new organic n-type FET transistors based on CVD graphene sheets. The researchers say that the new process and materials they used can enable flexible, transparent and short-channel OFETs - which could be used in the future for OLED or OLET displays.

To create the new transistors, the researchers used thermally evaporated thin-films of PDIF-CN2 (a perylene diimide derivative, specifically Flexterra's ActiveInk N1100) as the organic semiconductor for the active channel of the transistor, with the single-layer CVD graphene (grown at Italy's IIT INSTITUTE) as the electrode material

In 2011 the University of Florida announced a new organic-TFT backplane/emitter technology called CN-VOLET. The University spun-off the technology into a company called nVerPix, with funding from Nanoholdings.

We have talked to nVerPix in the past and updated on the technology back in 2013. The nVerPix team presented their technology at SID's DisplayWeek - and it won the "best prototype" awarded. nVerPix demonstrate a working mono-color (green) 320x240 2.5" display. The aperture ratio is 70% and the brightness is over 500 nits.

Back in 2011 the University of Florida announced a new organic-TFT backplane technology called CN-VOLET, which is especially suited for OLED panels. Earlier in 2010, the University spun-off a company called nVerPix to commercialize this technology, with funding from Nanoholdings. Now nVerPix sent us some information and updates regarding their technology and business as they are seeking to raise funds (Round A).

CN-VFET is a new carbon nanotube based transistor technology that can conduct electricity about a 1000 times faster than current silicon-based TFTs. The basic transistor design is called CN-VFET (which can be used for logic and memory applications). When they combine the CN-VFET with the OLED stack they call it a CN-VOLET (CN Vertical OLET).

A couple of weeks ago we reported about new organic-TFT developed by University of Florida researchers, and now we've got some more info. The new transistor design is carbon nanotube based and it can efficiently drive the high-currents OLEDs need, at lower voltages than other designs.

The researchers not only designed a new transistor, but they combined it with emitting materials into a single design, called an OLET (we first reported about OLETs back in May 2010). The new design is called a CN-VOLET (Carbon Nanotube Vertical OLET). They say that this new design is more than eight-times more efficient than other competing devices. It also exhibits longer lifetime and should be easy to manufacture.

Researchers from the University of Florida developed a new OTFT for AMOLED displays. The new OTFT has a novel stacked vertical structure that automatically gives a large gate area. A thin gate can be achieved by spin-coating or other techniques. They say that 200µm resolution is sufficient to lay out the drain electrode which is the most demanding feature, compared with 25µm needed for some lateral TFTs.

The team prepares a paper that is due very soon to explain the new OTFT. There are still challenges of course to overcome in this design.