Japan-based Semiconductor Energy Laboratory (SEL) is an R&D IP company founded in 1980. SEL perform R&D in several areas, including transistors and semiconductor devices, materials and devices for OLEDs, LCDs and batteries, display devices and more.
The latest SEL OLED news:
Researchers from Semiconductor Energy Laboratory (SEL) developed flexible OLED displays that incorporate organic image sensors inside the OLED pixels using side-by-side patterning. The sensors can be used as cameras for applications such as fingerprint sensing - which will work on the entire display.
SEL presented two prototypes, one a 3.07" 360x540 (212 PPI) display and the second is a 8" one with a higher pixel density of 302 PPI. SEL says that the fingerprint recognition works even when the display is bent.
Japan's Semiconductor Energy Laboratory (SEL) is developing several exciting OLED technologies, and the company demonstrated its latest panels at SID DisplayWeek. The recently published video below shows the company's OLED technologies shown at the event:
First up is the world's smallest 8K display, a 8.3" OLED (1058 PPI) with a resolution of 7680x4320. The panel is based on a white OLED with color filter architecture and SEL's proprietary CAAC-IGZO (c-axis aligned crystalline In-Ga-Zn-O) backplane material.
Semiconductor Energy Laboratory (SEL) has developed a high density OLED display (5,291 PPI) based on its proprietary CAAC-IGZO (C-Axis aligned crystalline In-Ga-Zn-O) backplane. SEL will discuss this new achievement at SID 2019.
We do not have more information, but SEL has shown some high resolution CAAC OLEDs before. In 2014 it demonstrated a 2.8" 2560x1440 (1,058 PPI) WRGB OLED display. If SEL indeed developed a 5,291 PPI OLED display on glass it is very impressive.
Semiconductor Energy Laboratory (SEL) demonstrated two new OLED display prototypes, both based on the company's proprietary CAAC-IGZO (c-axis aligned crystalline In-Ga-Zn-O) backplane material.
First up is the world's smallest 8K display, a 8.3" OLED (1058 PPI) with a resolution of 7680x4320. The panel is based on a white OLED with color filter architecture.
SEL develops a new Host-Guest system that enables red phosphorescent emitters with 5.4X the lifetime
Researchers from Japan's Semiconductor Energy Laboratory (SEL) developed a novel Host-Guest system that drastically improves the lifetime of OLED emitters. The researchers report that using this system, a deep-red phosphorescent emitter achieved 5.4 times longer the lifetime compared to the same emitter with a conventional system.
The researchers will present the new system at SID DisplayWeek 2018 in May. The new system is not only highly durable, it also satisfies the red chromaticity of the BT.2020 standard.
Researchers from Japan's Semiconductor Energy Laboratory (SEL) developed a new OLED device architecture that enables efficient, long-lasting and low-drive voltage OLEDs, at practical brightness levels.
The researchers call the new device architecture exciplex-triplet energy transfer, or ExTET. The image above shows the elementary process and its energy state diagram. To create the emissive layer of the ExTET, the researcher took a film with an electron-transporting material (ETM) and a hole-transporting material (HTM) and doped it with a phosphorescent dopant. Direct recombination between the electrons at the LUMO level and the hole at the HUMO level forms a charge-transfer excited complex (exciplex) - and the phosphorescent emission occurs via energy transfer from the exciplex to the dopant.
In April 2016, Japan's Semiconductor Energy Laboratory (SEL) and Advanced Film Device announced they have developed a hybrid OLED - reflective LCD display, that can switch between an OLED mode (for dark environments) and reflective LCD mode (for sunlight visibility). Such a display could be very power efficient.
SEL demonstrated a prototype display at SID 2016, and provided more information. SEL calls these displays TR-Hybrid displays (TR means Transmissive OLED and Reflective LC). To create this display, SEL introduced holes into the reflecting electrodes of a reflective LCD, and the OLED layer beneath transmitted light through these holes in OLED mode.
Japan Display (JDI) announced that it has signed a technology development agreement with Semiconductor Energy Laboratory (SEL) regarding the development of Oxide-semiconductor backplane technology for next-generation displays, including OLED displays.
SEL's backplane technology is called c-axis aligned crystal (CAAC), which has been co-developed with Sharp. CAAC is based on an IGZO thin-film that has a novel crystal structure.
Researchers from Japan's Semiconductor Energy Laboratory (SEL) and Advanced Film Device developed a display that includes an OLED display on top of a reflective LCD. The idea is that such a display have high visibility in both a dark environment (using the emissive OLED) and a bright one (using the reflective LCD).
This is similar somewhat to transflective LCD displays and can prove to be a smart solution. The researchers say that the same FET layer is used to control both display devices and so results in a low-power device. The researchers will present this new development at SID DisplayWeek next month and hopefully we will bring more information.
Last week Japan's SEL demonstrated an 81" 8K OLED display, built from 36 13.5" flexible OLED panels that have transparent edges on two adjacent sides. The panels are tiled together seamlessly - and this enabled SEL to create the world's largest OLED display ever.
We now have a photo of the display prototype, as you can see above. While this is an impressive feat, it's quite clear that the display is not seamless and you can say the places where the tiles are connected.