Researchers from Samsung's Advanced Institute of Technology (SAIT) developed a new method to increase the efficiency and lifetime of self-emissive Cadmium-free quantum dots. The researchers used Indium Phosphide QDs in a new structure that prevents oxidation and energy leaks and also absorbs current faster.

The researchers say that the new structure enhancements increases the internal quantum efficiency to almost 100 (the EQE reached 21.4%) while increasing the lifetime to a million hours (at a high brightness of 100 cd/m2). The maximum brightness is 100,000 nits. This performance is comparable to Cadmium-based QDs.

Samsung is still a long way from commercializing QD-LEDs but this could be an important step forward.

Atomic Force Microscopy for next-gen OLED processesAtomic Force Microscopy for next-gen OLED processes